A fully integrated 1 V, +9.5 dBm, 43%-PAE injection-locked Class-E power amplifier for wireless sensor network

Author

Oh, Hyoung-Seok ; Song, Taeksang ; Baek, Sang-Hyen ; Yoon, Euisik ; Kim, Choong-ki

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2006

Firstpage

235

Lastpage

238

Abstract

In most short-range wireless sensor network applications, the maximum transmit-power is typically about 10 dBm at 2.4 GHz ISM band. In such a low transmit-power level, the driving power and DC power consumption in the previous stage are no more negligible compared to the transmitted signal power. So, to increase the overall transmitter efficiency, not only the output power stage, but also the driver stage needs to be co-optimized for low power operation. In this paper, we present an injection-locked Class-E power amplifier (Class-E ILPA) suitable for the low transmit-power sensor network applications. The proposed power amplifier, which is fully integrated in 0.18 μm CMOS technology, achieves a power added efficiency (PAE) of 43% while delivering an output power of 9.5 dBm with a drain efficiency (DE) of 48.5% at 1 V supply voltage.

Keywords

CMOS analogue integrated circuits; UHF power amplifiers; wireless sensor networks; 0.18 mum; 1 V; 2.4 GHz; 43 percent; 48.5 percent; CMOS technology; injection-locked Class-E power amplifier; wireless sensor network; CMOS technology; Energy consumption; Frequency shift keying; Injection-locked oscillators; Power amplifiers; Power generation; Preamplifiers; Transceivers; Transmitters; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium, 2006 IEEE

Print_ISBN

0-7803-9412-7

Type

conf

DOI

10.1109/RWS.2006.1615138

Filename

1615138