Title :
A 63 % PAE and 10:1 VSWR at 3.3 V power amplifier in 0.25 μm SiGe BiCMOS for DCS and PCS applications
Author :
Maiore, Mario ; Berretta, Giuseppe ; Conti, Giovanni ; Pirrone, Ezio ; Campisi, Claudio
Author_Institution :
STMicroelectronics, Catania, Italy
Abstract :
A fully integrated monolithic power amplifier (PA) for DCS/PCS applications has been integrated in 0.25 μm SiGe BiCMOS technology. The three-stages power amplifier delivers 31.8 dBm of output power (Pout) with 63% power added efficiency (PAE). A 100 Ω differential input impedance power amplifier module (PAM) has been designed to validate the proposed circuit. The PA includes an on chip temperature compensated bias block. The bulky and expensive RF chokes normally used for the first and second stage have been integrated on-chip, in order to minimize the number of passive components into the module. The reported PA is planned to be used in an envelope elimination and restoration (EER) architecture with 3.3 V supply voltage. Furthermore, the PA can withstand up to 10:1 load voltage standing wave ratio (VSWR) at no permanent damage.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF power amplifiers; cellular radio; personal communication networks; semiconductor materials; 0.25 mum; 3.3 V; 63 percent; BiCMOS; DCS applications; PCS applications; RF chokes; SiGe; digital cellular systems; envelope elimination and restoration architecture; fully integrated monolithic power amplifier; personal communication services; power amplifier; power amplifier module; voltage standing wave ratio; BiCMOS integrated circuits; Distributed control; Germanium silicon alloys; Integrated circuit technology; Personal communication networks; Power amplifiers; Power generation; Radiofrequency amplifiers; Silicon germanium; Voltage;
Conference_Titel :
Radio and Wireless Symposium, 2006 IEEE
Print_ISBN :
0-7803-9412-7
DOI :
10.1109/RWS.2006.1615141
