DocumentCode
1569051
Title
A discussion on exponential-gain charge pump
Author
Gobbi, L. ; Cabrini, A. ; Torelli, G.
Author_Institution
Dept. of Electron., Univ. of Pavia, Pavia
fYear
2007
Firstpage
615
Lastpage
618
Abstract
This paper presents a discussion about the performance achievable by an exponential-gain charge pump (i.e., by a charge pump featuring a voltage gain which increases exponentially with the number of stages). This charge pump topology is analyzed in terms of both voltage gain and equivalent output resistance. An analytical expression of these two parameters is provided, which allows performance comparison with other charge pump topologies. The expression of the output voltage rise time is also derived.
Keywords
VLSI; network topology; charge pump topology; equivalent output resistance; exponential-gain charge pump; Capacitors; Charge pumps; Charge transfer; Circuit topology; Elevators; Nonvolatile memory; Performance analysis; Performance gain; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on
Conference_Location
Seville
Print_ISBN
978-1-4244-1341-6
Electronic_ISBN
978-1-4244-1342-3
Type
conf
DOI
10.1109/ECCTD.2007.4529671
Filename
4529671
Link To Document