Title :
Gated Geiger mode operation and after pulse probability measurement of the InAlAs APD
Author :
Nakata, T. ; Mizuki, E. ; Takahashi, S. ; Makita, K. ; Tomita, A.
Author_Institution :
Nano Electron. Res. Labs., NEC Corp., Otsu
Abstract :
To investigate the after pulse process and the device design for after pulse reduction, we fabricated an InAlAs-APD with two-step mesa structure. We report the after pulse probability for the InAlAs multiplication layer for the first time.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical receivers; probability; quantum cryptography; APD fabrication; InAlAs; gated Geiger mode operation; multiplication layer; pulse probability measurement; two-step mesa structure; Dark current; Detectors; Frequency response; Indium compounds; Laboratories; National electric code; Optical pulses; Pulse circuits; Pulse measurements; Signal detection;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688572
