DocumentCode
1569272
Title
Geiger-mode operation of antimonide-based avalanche photodiodes in the mid-wave infrared
Author
Duerr, E.K. ; Manfra, M.J. ; Bailey, R.J. ; Diagne, M.A. ; Donnelly, J.P. ; Turner, G.W.
Author_Institution
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA
fYear
2008
Firstpage
232
Lastpage
233
Abstract
We demonstrate avalanche photodiodes operating in the Geiger-mode with photoresponse at wavelengths longer than 3 mum. For these MBE-grown, antimonide-based APDs, the dark count rate is ~1 MHz at 1.5 V of overbias at 87 K.
Keywords
avalanche photodiodes; dark conductivity; molecular beam epitaxial growth; optical receivers; semiconductor growth; APD; Geiger-mode operation; MBE growth; antimonide-based avalanche photodiodes; dark count rate; photoresponse; temperature 87 K; voltage 1.5 V; Avalanche photodiodes; Breakdown voltage; Electric breakdown; Electrons; Laser modes; Laser radar; Molecular beam epitaxial growth; Radar detection; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688574
Filename
4688574
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