Analysis of wide tuning range CMOS VCO with active inductors

Author

Filanovsky, I.M. ; Reja, Md Mahbub ; Verhoeven, C.J.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada

fYear

2010

Firstpage

93

Lastpage

96

Abstract

Operation of a wide tuning range CMOS voltage-controlled oscillator (VCO) utilizing active inductors is described. The oscillator is based on LC cross-coupled topology with tunable active inductors replacing the passive ones. The operation embraces sinusoidal, transitional, and relaxation regimes. The wide tuning frequency range is achieved by this continuous change of operation regime. The qualitative description is given using the pole placement root locus. The quantitative calculations of amplitude and frequency are done using the van der Pol model. The oscillator was designed and simulated in 90 nm CMOS process. The operation was confirmed for output frequency ranging from 500 MHz to 10.3 GHz.

Keywords

CMOS integrated circuits; inductors; voltage-controlled oscillators; CMOS process; LC cross-coupled topology; pole placement root locus; tunable active inductor; van der Pol model; voltage-controlled oscillator; wide tuning frequency range; wide tuning range CMOS VCO; Active inductors; CMOS process; Circuit simulation; Differential equations; Frequency; Laboratories; Semiconductor device modeling; State feedback; Tuning; Voltage-controlled oscillators; Nonlinear circuits; nonlinear oscillations; quasisinusoidal oscillations; relaxation oscillations; van der Pol oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on

Conference_Location

Seattle, WA

ISSN

1548-3746

Print_ISBN

978-1-4244-7771-5

Type

conf

DOI

10.1109/MWSCAS.2010.5548569

Filename

5548569