A 2-6 GHz fully integrated tunable CMOS power amplifier for multi-standard transmitters

Author

Imanishi, Daisuke ; Hong, JeeYoung ; Okada, Kenichi ; Matsuzawa, Akira

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2010

Firstpage

351

Lastpage

352

Abstract

A tunable power amplifier (PA) from 2.1 GHz to 6.0 GHz is presented for multi-standard radios. The proposed multi-band PA can tune the output impedance to 50 Â¿ over a wide frequency range, so external isolators following PAs can be eliminated. The PA is implemented by using a 0.18 Â¿m CMOS process, and the supply voltage is 3.3 V. Over all of the frequency range, the PA realizes output return loss S₂₂ of smaller than -8 dB, power gain of larger than 12 dB, output 1-dB compression point of larger than 15 dBm.

Keywords

CMOS integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; radio transmitters; CMOS process; frequency 2.1 GHz to 6 GHz; fully integrated tunable CMOS; gain 12 dB; loss -8 dB; multi-standard radios; multistandard transmitters; output impedance; power amplifier; tunable power amplifier; CMOS process; CMOS technology; Frequency; Impedance matching; Isolators; Power amplifiers; Power generation; Transmitters; Tunable circuits and devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference (ASP-DAC), 2010 15th Asia and South Pacific

Conference_Location

Taipei

Print_ISBN

978-1-4244-5765-6

Electronic_ISBN

978-1-4244-5767-0

Type

conf

DOI

10.1109/ASPDAC.2010.5419868

Filename

5419868