• DocumentCode
    1569545
  • Title

    Monte Carlo study of the temperature dependent performance of GaN versus GaAs terahertz quantum cascade structures

  • Author

    Bellotti, Enrico ; Driscoll, Kristina ; Moustakas, Theodore D. ; Paiella, Roberto

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA
  • fYear
    2008
  • Firstpage
    266
  • Lastpage
    267
  • Abstract
    We present a Monte Carlo study of the carrier dynamics in terahertz quantum cascade lasers to quantify the potential of GaN/AlGaN over GaAs/AlGaAs quantum wells for high temperature operation.
  • Keywords
    III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; gallium compounds; microwave photonics; quantum cascade lasers; terahertz wave devices; GaAs-AlGaAs; GaN-AlGaN; Monte Carlo method; carrier dynamics; high temperature operation; quantum wells; terahertz quantum cascade lasers; Aluminum gallium nitride; Frequency; Gallium arsenide; Gallium nitride; Monte Carlo methods; Optical scattering; Quantum cascade lasers; Quantum computing; Semiconductor lasers; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688592
  • Filename
    4688592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1569545