A CMOS image sensor with 2.0-ē random noise and 110-kē full well capacity using column source follower readout circuits

Author

Kohara, Takahiro ; Lee, Woonghee ; Mizobuchi, Koichi ; Sugawa, Shigetoshi

Author_Institution

Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan

fYear

2010

Firstpage

345

Lastpage

346

Abstract

A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 with a lateral overflow integration capacitor technology. The 1/4-inch, SVGA CMOS image sensor has achieved 0.98 column readout gain, 100-Â¿V/e^- conversion gain, 2.0-e^- total random noise, 0.5-e^- in readout circuits, 110,000-e^- full well capacity and 95-dB dynamic range. Moreover, we measure the pixel noises by using developed image sensor and optimize pixel operating condition.

Keywords

CMOS image sensors; circuit noise; random noise; readout electronics; SVGA CMOS image sensor; column amplifier; column source follower readout circuit; full well capacity; lateral overflow integration capacitor; low noise CMOS image sensor; pixel noise; pixel operating condition; random noise; CMOS image sensors; CMOS technology; Capacitors; Circuit noise; Degradation; Dynamic range; Image converters; Low-noise amplifiers; Performance gain; Pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference (ASP-DAC), 2010 15th Asia and South Pacific

Conference_Location

Taipei

Print_ISBN

978-1-4244-5765-6

Electronic_ISBN

978-1-4244-5767-0

Type

conf

DOI

10.1109/ASPDAC.2010.5419869

Filename

5419869