DocumentCode
1569580
Title
A 700-MHz VCO using high-Q silicon on insulator (SOI) inductors
Author
Tekin, A. ; Zencir, E. ; Huang, D. ; Liu, W. ; Dogan, N.S.
Author_Institution
Dept. of Electr. Eng., California Univ., Santa Cruz, CA, USA
fYear
2006
Firstpage
427
Lastpage
429
Abstract
This paper presents a 700-MHz low power, low phase noise LC voltage-controlled oscillator (VCO) using high-Q silicon on insulator (SOI) inductors in a 0.35-μm SOI CMOS process. This VCO has been designed for use in a phase-locked loop (PLL) circuit of a UHF receiver chain. Thanks to high-Q SOI inductors, very low phase noise is achieved with low power dissipation. The measured phase noise of the VCO is -121 dBc/Hz at 600 KHz offset with 2.4 mA current from a 2.5-V supply. The VCO has a 33% overall tuning range.
Keywords
CMOS integrated circuits; inductors; phase locked loops; phase noise; silicon-on-insulator; voltage-controlled oscillators; 0.35 mum; 2.4 mA; 2.5 V; 600 kHz; 700 MHz; CMOS process; PLL circuit; SOI; UHF receiver chain; VCO; high-Q silicon on insulator; inductors; low power dissipation; phase noise; phase-locked loop circuit; voltage-controlled oscillator; CMOS process; Current measurement; Inductors; Noise measurement; Phase locked loops; Phase noise; Power dissipation; Silicon on insulator technology; UHF circuits; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Symposium, 2006 IEEE
Print_ISBN
0-7803-9412-7
Type
conf
DOI
10.1109/RWS.2006.1615186
Filename
1615186
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