• DocumentCode
    1569597
  • Title

    A low voltage SiGe HBT up-conversion mixer for 5.8 GHz WLAN

  • Author

    Myoung, No Gil ; Choi, Byoung Gun ; Park, Chul Soon

  • Author_Institution
    Sch. of Eng., Inf. & Commun. Univ., Daejeon, South Korea
  • fYear
    2006
  • Firstpage
    435
  • Lastpage
    438
  • Abstract
    A new low voltage doubly balanced mixer topology for 5.8 GHz wireless local area network applications is presented in this paper. To reduce the supply voltage, a single stacked transistor mixer topology is designed with 50 GHz fT SiGe HBT process. The designed up-conversion mixer has a conversion gain of 4.2 dB, an OP1 dB of -6 dBm and LO to RF isolation greater than 31 dB while consuming DC power of 13.2 mW under a 1.2 V low supply voltage. The chip size including pads is 0.96 mm × 0.92 mm.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave mixers; wireless LAN; 1.2 V; 13.2 mW; 4.2 dB; 5.8 GHz; 50 GHz; HBT; RF isolation; WLAN; low voltage doubly balanced mixer topology; single stacked transistor mixer topology; up-conversion mixer; wireless local area network; Baseband; Circuit topology; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Low voltage; RF signals; Radio frequency; Silicon germanium; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio and Wireless Symposium, 2006 IEEE
  • Print_ISBN
    0-7803-9412-7
  • Type

    conf

  • DOI
    10.1109/RWS.2006.1615188
  • Filename
    1615188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1569597