Title :
Backside-illuminated high-current photodiode for analog optical links
Author :
Sakai, Kiyohide ; Nagatsuka, Tsutomu ; Itakura, Shigetaka ; Otsuka, Hiroshi ; Hirano, Yoshihito
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Sagamihara
Abstract :
We fabricated a backside-illuminated high-current InGaAs/InP photodiode, and demonstrated an RF power of 25.8 dBm at 5 GHz. The third-order intercept point was 34.2 dBm at the photocurrent of 100 mA, 5.2 GHz.
Keywords :
microwave photonics; optical communication equipment; photodiodes; radio-over-fibre; InGaAs-InP; analog optical links; backside-illuminated photodiode; current 100 mA; frequency 5 GHz; frequency 5.2 GHz; high-current photodiode; photocurrent; radio-over-fiber links; third-order intercept point; Absorption; Indium gallium arsenide; Indium phosphide; Optical attenuators; Optical distortion; Optical fiber communication; Optical modulation; Photoconductivity; Photodiodes; Radio frequency;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688603
