• DocumentCode
    1569749
  • Title

    Model study of 1T-1STT MTJ memory arrays for embedded applications

  • Author

    Raychowdhury, Arijit

  • Author_Institution
    Circuit Res. Lab., Intel Corp., Hillsboro, OR, USA
  • fYear
    2010
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    The use of current to switch nanomagnets has opened up opportunities for using spin-torque-transfer (STT) based magnetic memories in embedded applications. This paper presents a design space exploration of 1T-1STT MTJ arrays for embedded applications, under variations and disturbs conditions.
  • Keywords
    embedded systems; magnetic storage; nanomagnetics; random-access storage; 1T-1STT MTJ memory arrays; RAM; current; design space exploration; embedded application; magnetic memories; nanomagnet switching; spin-torque-transfer; CMOS technology; Logic arrays; Magnetic switching; Magnetic tunneling; Nonvolatile memory; Polarization; Random access memory; Space technology; Switches; Torque;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
  • Conference_Location
    Seattle, WA
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4244-7771-5
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2010.5548591
  • Filename
    5548591
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1569749