Title :
Model study of 1T-1STT MTJ memory arrays for embedded applications
Author :
Raychowdhury, Arijit
Author_Institution :
Circuit Res. Lab., Intel Corp., Hillsboro, OR, USA
Abstract :
The use of current to switch nanomagnets has opened up opportunities for using spin-torque-transfer (STT) based magnetic memories in embedded applications. This paper presents a design space exploration of 1T-1STT MTJ arrays for embedded applications, under variations and disturbs conditions.
Keywords :
embedded systems; magnetic storage; nanomagnetics; random-access storage; 1T-1STT MTJ memory arrays; RAM; current; design space exploration; embedded application; magnetic memories; nanomagnet switching; spin-torque-transfer; CMOS technology; Logic arrays; Magnetic switching; Magnetic tunneling; Nonvolatile memory; Polarization; Random access memory; Space technology; Switches; Torque;
Conference_Titel :
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-7771-5
DOI :
10.1109/MWSCAS.2010.5548591
