Title :
Monolithic Ge/Si avalanche photodiode receiver for 10Gb/s 1.3μm application
Author :
Kang, Y. ; Zadka, M. ; Litski, S. ; Sarid, G. ; Morse, M. ; Paniccia, M.J. ; Kuo, Y.-H. ; Bowers, J. ; Beling, A. ; Liu, H.D. ; McIntosh, D.C. ; Campbell, J. ; Pauchard, A.
Author_Institution :
Intel Corp., Santa Clara, CA
Abstract :
We have developed monolithically grown Ge/Si avalanche photodiodes (APDs) for high data rate and near infrared wavelength fiber communication systems. The surface illuminated APDs demonstrate gain-bandwidth of 153 GHz.
Keywords :
Ge-Si alloys; avalanche photodiodes; optical fibre communication; optical receivers; semiconductor growth; APD; Ge-Si; avalanche photodiode receiver; bandwidth 153 GHz; bit rate 10 Gbit/s; gain bandwidth; near infrared wavelength fiber communication; wavelength 1.3 mum; Absorption; Avalanche photodiodes; CMOS technology; Dark current; Optical fiber communication; Optical interconnections; Photodetectors; Photonics; Silicon; Tunneling;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688605
