Title :
Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate
Author :
Fukano, Hideki ; Mitsuhara, Manabu ; Kondo, Yasuhiro
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi
Abstract :
We report the growth and fabrication of a photodiode using InGaAsN on InP. A low residual carrier concentration is achieved using a low RF power plasma source. The fabricated photodiode has a 2.1-mum cutoff wavelength.
Keywords :
III-V semiconductors; carrier density; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; infrared detectors; photodiodes; plasma materials processing; semiconductor growth; InGaAsN layer; InGaAsN-InP; InP; InP substrate; low RF power plasma source; metalorganic molecular beam epitaxy; midinfrared photodetection; photodiode; residual carrier concentration; semiconductor fabrication; semiconductor growth; wavelength 2 mum; Absorption; Indium phosphide; Molecular beam epitaxial growth; Nitrogen; Photodetectors; Photodiodes; Photonic band gap; Plasma sources; Radio frequency; Substrates; RF plasma; metalorganic molecular beam epitaxy; photodiode;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688606
