Title :
Indium phosphide based membrane photodetector for optical interconnects on silicon
Author :
Binetti, P.R.A. ; Leijtens, X.J.M. ; de Vries, T. ; Oei, Y.S. ; Raz, O. ; Di Cioccio, L. ; Fedeli, J. -M ; Lagahe, C. ; Orobtchouk, R. ; Van Campenhout, J. ; Van Thourhout, D. ; van Veldhoven, P.J. ; Nötzel, R. ; Smit, M.K.
Author_Institution :
COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven
Abstract :
We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
Keywords :
III-V semiconductors; elemental semiconductors; indium compounds; integrated optoelectronics; membranes; optical design techniques; optical fabrication; optical interconnections; photodetectors; silicon; silicon-on-insulator; InP-Si; RF characterization; SOI wafer; Si; detector fabrication process; electronic IC processing; indium phosphide; membrane photodetector design; silicon-wiring photonic circuit; wafer scale processing; Biomembranes; Detectors; Indium phosphide; Integrated circuit interconnections; Optical device fabrication; Optical interconnections; Optical waveguides; Photodetectors; Photonic integrated circuits; Silicon;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688610
