Title :
Silicon Odometer: An On-Chip Reliability Monitor for Measuring Frequency Degradation of Digital Circuits
Author :
Kim, Tae-Hyoung ; Persaud, Randy ; Kim, Chris H.
Author_Institution :
Univ. of Minnesota, Minneapolis
Abstract :
A fully-digital reliability monitor is presented for high resolution frequency degradation measurements of digital circuits. The proposed scheme measures the beat frequency of two ring oscillators, one which is stressed and the other which is unstressed, to achieve 50X higher delay sensing resolution compared to prior techniques. A reliability monitor test chip has been fabricated in a 1.2 V, 130 nm CMOS technology.
Keywords :
CMOS digital integrated circuits; distance measurement; elemental semiconductors; integrated circuit reliability; oscillators; silicon; Si; digital circuits; frequency degradation measurements; fully-digital reliability monitor; on-chip reliability monitor; reliability monitor test chip fabrication; ring oscillators; silicon odometer; size 130 nm; voltage 1.2 V; CMOS technology; Degradation; Delay; Digital circuits; Frequency measurement; Monitoring; Ring oscillators; Semiconductor device measurement; Silicon; Stress measurement;
Conference_Titel :
VLSI Circuits, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-05-5
Electronic_ISBN :
978-4-900784-05-5
DOI :
10.1109/VLSIC.2007.4342682
