Title :
A balanced cdma2000 SiGe HBT load insensitive power amplifier
Author :
Berretta, Giuseppe ; Cristaudo, Domenico ; Scaccianoce, Salvatore
Author_Institution :
STMicroelectronics, Catania, Italy
Abstract :
A MMIC SiGe HBT balanced power amplifier for cdma2000 is proposed. The PA delivers 28.5 dBm linear output power with an adjacent channel power ratio ACPR below -44 dBc, a PAE of 35% and a gain of 30 dB. Thanks to the balanced approach without the use of an isolator, the PA under a 4:1 VSWR load mismatch delivers 26 dBm linear output power with a 1.5 dB gain variation and a 15% current consumption increase. The PA has been realized by using a 0.25 μm BiCMOS technology.
Keywords :
3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; bipolar MMIC; 0.25 micron; 1.5 dB; 30 dB; BiCMOS technology; HBT load insensitive power amplifier; MMIC amplifiers; SiGe; adjacent channel power ratio; cdma2000; current consumption; load mismatch; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Isolators; MMICs; Power amplifiers; Power generation; Silicon germanium;
Conference_Titel :
Radio and Wireless Symposium, 2006 IEEE
Print_ISBN :
0-7803-9412-7
DOI :
10.1109/RWS.2006.1615209
