• DocumentCode
    1570039
  • Title

    Identification and pre-compensation of the electrical memory effects in wireless transceivers

  • Author

    Liu, Taijun ; Boumaiza, Slim ; Ghannouchi, Fadhel M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada
  • fYear
    2006
  • Firstpage
    535
  • Lastpage
    538
  • Abstract
    This paper proposes a novel approach to identify the electrical memory effects in wireless transceivers fed with a modulated signal. With this new proposed memory effect identification approach, the contribution of the electrical memory effects to the out-of-band emission can be distinguished easily. Furthermore, a Hammerstein and a memory polynomial pre-compensator are used to pre-correct the dynamic nonlinearity of the transceiver. Their corresponding pre-compensation performances are compared in terms of suppression level of the out-of-band emission caused by the electrical memory effects. A prototype of a wireless transceiver, which is based on an L-band 60-watt GaAs FET push-pull amplifier, is utilized to validate the proposed identification approach and evaluate the performances of the pre-compensators.
  • Keywords
    III-V semiconductors; differential amplifiers; field effect transistors; gallium arsenide; modulation; transceivers; 60 W; FET push-pull amplifier; electrical memory effect identification approach; memory polynomial precompensator; out-of-band emission suppression; performance evaluation; signal modulation; wireless transceivers; Bandwidth; Circuits; Distortion measurement; Frequency; Impedance; Performance evaluation; Power system reliability; Transceivers; Transmitters; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio and Wireless Symposium, 2006 IEEE
  • Print_ISBN
    0-7803-9412-7
  • Type

    conf

  • DOI
    10.1109/RWS.2006.1615212
  • Filename
    1615212