Title :
Uncooled quantum dot semiconductor optical amplifiers
Author :
White, I.H. ; Penty, R.V. ; Wang, H. ; Thompson, M.G. ; Aw, E.T.
Author_Institution :
Electr. Eng. Div., Cambridge Univ., Cambridge
Abstract :
Recent studies on 1.3 mum InGaAs/GaAs QD-SOAs show they are able to deliver >18 dB gain across a 20 to 70degC temperature range. Successful system demonstrations over temperature are reported at channel rates of 10 Gb/s.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor optical amplifiers; thermo-optical effects; InGaAs-GaAs; bit rate 10 Gbit/s; on-chip gain; quantum dot semiconductor optical amplifiers; temperature 20 degC to 70 degC; temperature dependence; uncooled optical amplifications; uncooled semiconductor optical amplifiers; wavelength 1.3 mum; Gallium arsenide; Optical filters; Optical receivers; Optical saturation; Optical waveguides; Power generation; Quantum dots; Semiconductor optical amplifiers; Temperature dependence; Temperature distribution;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688624
