A CMOS Readout Circuit for Silicon Resonant Accelerometer with 32-ppb bias stability

Author

He, Lin ; Xu, Yong Ping ; Palaniapan, Moorthi

Author_Institution

Nat. Univ. of Singapore, Singapore

fYear

2007

Firstpage

146

Lastpage

147

Abstract

This paper describes a fully-differential CMOS readout circuit for silicon micro-resonant accelerometer. Tested with a SOI resonator, the readout chip sustains the oscillation at 110 kHz with a phase noise of -36 dBc@1 Hz and a bias stability of 0.0035 Hz or 32 ppb, which can be translated to an amplitude noise of 1 Aring/radicHz down to 0.05 Hz and stability of 0.22 Aring up to 100 seconds. The chip is fabricated in a 0.35-mum CMOS process and draws 5 mA under a 3.3-V single supply.

Keywords

CMOS integrated circuits; accelerometers; elemental semiconductors; micromechanical resonators; phase noise; readout electronics; silicon; silicon-on-insulator; MEMS resonator; SOI resonator; amplitude noise; bias stability; current 5 mA; frequency 0.0035 Hz; frequency 110 kHz; fully-differential CMOS readout circuit; phase noise; readout chip; silicon microresonant accelerometer; size 0.35 mum; voltage 3.3 V; Accelerometers; CMOS process; Circuit noise; Circuit stability; Circuit testing; Noise level; Phase noise; RLC circuits; Resonance; Silicon; CMOS readout circuit; MEMS resonator; bias stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-05-5

Electronic_ISBN

978-4-900784-05-5

Type

conf

DOI

10.1109/VLSIC.2007.4342692

Filename

4342692