Title :
A 18GHz to 27 GHz low noise amplifier with improved TSMC inductor module
Author :
Sun, Pou-Tou ; Hsiao, Yu-Hsuan ; Chan, Ssu-Chieh ; Chuang, Ying-jui
Author_Institution :
Dept. of Commun. Eng., Feng-Chia Univ., Taichung, Taiwan
Abstract :
This paper presents a wideband low noise amplifier by using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 um CMOS process for K-Band application. We use active diode to improve linearity, and improve TSMC inductor module by advanced design system momentum. The measurement results show that the input return loss is less than -8 dB, output return loss is less than -13.4 dB, the gain is 4.8 dB, the minimum noise figure is 4.1 dB, and the power consumption is 16.4 mW. The die area including pads is 0.75 mm2.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; inductors; integrated circuit design; low noise amplifiers; wideband amplifiers; K-Band application; TSMC CMOS process; Taiwan Semiconductor Manufacturing Company; active diode; advanced design system momentum; frequency 18 GHz to 27 GHz; gain 4.8 dB; improved TSMC inductor module; noise figure 4.1 dB; power 16.4 mW; size 0.18 mum; wideband low noise amplifier; CMOS integrated circuits; CMOS technology; Inductors; Radio frequency; Semiconductor device measurement; Low Noise Amplifier; TSMC 0.18 um Process;
Conference_Titel :
Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC), 2011
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-9792-8
DOI :
10.1109/CSQRWC.2011.6037033
