Title :
Active balun noise amplifier for WLAN application
Author :
Sun, Pou-Tou ; Chan, Ssu-Chieh ; Chuang, Ying-jui
Author_Institution :
Dept. of Commun. Eng., Feng-Chia Univ., Taichung, Taiwan
Abstract :
This paper presents a low noise amplifier with active balun by using SiGe0.35 technology process for WLAN, the simulation results show that input return loss, S11, is less than -19.1dB and output return loss, S22, is less than -11.7 dB, output return loss, S33, is less than -12.8 dB. The power gain, S21, is 14.7dB another power gain, S31, is 14.4 dB, and the noise figure is less than 3.7 dB for the operating frequency from 5.25 GHz to 5.35 GHz.
Keywords :
Ge-Si alloys; baluns; low noise amplifiers; microwave amplifiers; wireless LAN; 0.35 technology process; LNA; SiGe; WLAN application; active balun noise amplifier; frequency 5.25 GHz to 5.35 GHz; gain 14.4 dB; gain 14.7 dB; low noise amplifier; Radio frequency; Wireless LAN; Active balun; Low noise amplifier; SiGe0.35; WLAN;
Conference_Titel :
Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC), 2011
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-9792-8
DOI :
10.1109/CSQRWC.2011.6037035
