Title :
A 70nm 16Gb 16-level-cell NAND Flash Memory
Author :
Shibata, Noboru ; Maejima, Hiroshi ; Isobe, Katsuaki ; Iwasa, Kiyoaki ; Nakagawa, Michio ; Fujiu, Masaki ; Shimizu, Takahiro ; Honma, Mitsuaki ; Hoshi, Satoru ; Kawaai, Toshimasa ; Kanebako, Kazunori ; Yoshikawa, Susumu ; Tabata, Hideyuki ; Inoue, Atsushi
Author_Institution :
Toshiba Corp. Semicond. Co., Kanagawa
Abstract :
A 16 Gb 16-level-cell (16LC) NAND flash memory using 70 nm design rule has been developed. This 16LC NAND flash memory can store 4 bits in a cell which enabled double bit density comparing to 4-level-cell (4LC) NAND flash with the same design rule. New programming method achieves 0.62 MB/s programming throughput.
Keywords :
NAND circuits; flash memories; 16-level-cell NAND flash memory; 4-level-cell NAND flash memory; size 70 nm; storage capacity 16 Gbit; storage capacity 4 bit; CMOS technology; Circuits; Costs; Error correction codes; Latches; Nonvolatile memory; Silicon; Size control; Threshold voltage; Throughput;
Conference_Titel :
VLSI Circuits, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-05-5
Electronic_ISBN :
978-4-900784-05-5
DOI :
10.1109/VLSIC.2007.4342710
