Title :
Quantum structures for infrared imaging
Author :
Gunapala, S.D. ; Bandara, S.V. ; Hill, C.J. ; Ting, D.Z. ; Mumolo, J.M. ; Liu, J.K. ; Keo, S.A. ; Soibel, A.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
Abstract :
We have used quantum wells, quantum dots, and strained layer sperlattices for infrared detection and imaging. Quantum well infrared photodetectors (QWIPs) are based on GaAs/AlGaAs material system and the quantum dot infrared detector (QDIPs) are based on InAs/InGaAs/GaAs materials system. Strained layer superlattice (SLS) detectors are based on InAs/GaSb materials system and grown on GaSb substrates.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; infrared imaging; quantum optics; semiconductor quantum dots; semiconductor quantum wells; semiconductor superlattices; GaAs-AlGaAs; GaSb; infrared imaging; quantum dots; quantum structures; quantum wells; strained layer superlattices; Cameras; Gallium arsenide; Infrared detectors; Infrared imaging; Laser sintering; Molecular beam epitaxial growth; Optical imaging; Pixel; Quantum dots; Temperature;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688638
