Title :
Reduction in dark current using resonant tunneling barrier in dots-in-a-well long wavelength infrared photodetectors
Author :
Barve, A.V. ; Shah, S.Y. ; Shao, J. ; Vandervelde, Thomas E. ; Shenoi, R. ; Jang, W.-Y. ; Krishna, S.
Author_Institution :
Dept of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM
Abstract :
Reduction of dark current in DWELL photodetectors using resonant tunneling barriers is presented. At 77 K, the dark current is reduced by a factor of 1000 in positive bias. The peak detectivity is 4 times 109 cm.Hz1/2 W-1 (Vb= -1.1 V, 77 K at lambdapeak = 11 mum).
Keywords :
infrared detectors; photodetectors; resonant tunnelling; DWELL photodetectors; dark current reduction; dots-in-a-well long wavelength infrared photodetectors; resonant tunneling barrier; temperature 77 K; voltage -1.1 V; wavelength 11 mum; Carrier confinement; Dark current; Electrons; Gallium arsenide; Infrared detectors; Photodetectors; Physics; Quantum dots; Resonant tunneling devices; Temperature;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688639
