Computer simulation of magnetoresistance behavior in magnetic tunnel junctions exchange-biased by synthetic antiferromagnet

Summary form only given. In a practical density level of MRAM utilizing magnetic tunnel junctions (MTJs), the cell dimensions are expected to be in the submicron range, where the switching of a magnetic layer is dominated by magnetostatic interactions, causing a significant increase of the switching fields. In particular, a large bias field resulting in a large switching field asymmetry is harmful in MRAM applications. In order to reduce the bias field, a synthetic antiferromagnet (SyAF), instead of a single antiferromagnet, is frequently used as a pinning material. The main focus of the present work is to examine the effects of cell dimensions and the relative Co layer thickness on the magnetoresistance characteristics of MTJs exchange-biased by SyAF.