Transport in magnetically-doped magnetic tunnel junctions

Author

Seung-Young Bae ; Shan Xiang Wang

Author_Institution

Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA

fYear

2002

Abstract

Summary form only given. We report striking transport features in high quality magnetic tunnel junctions (TMR /spl ges/ 40 % at room temperature). These features are presumed to be associated with well-localized magnetic impurities (Co/sup +2/) inside the tunnel barriers, which diffuse out from the bottom CoFe electrode during the high power plasma oxidation of the tunnel barriers.

Keywords

MIM structures; cobalt alloys; exchange interactions (electron); iron alloys; magnetic impurities; magnetic multilayers; oxidation; tunnelling magnetoresistance; Applebaum theory; Co/sup +2/ well-localized magnetic impurities; CoFe; CoFe bottom electrode; TMR suppression; correlated electron transport; dynamic conductance anomalies; high power plasma oxidation; magnetically-doped magnetic tunnel junctions; s-d exchange interaction; spin-flip scattering; temperature dependence; tunnel barrier impurities; Electrodes; Electrons; Impurities; Magnetic tunneling; Materials science and technology; Oxidation; Plasma temperature; Plasma transport processes; Scattering; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1001181

Filename

1001181