Title :
ALCVD AlO/sub x/ barrier layers for magnetic tunnel junction applications
Author :
Bubber, R. ; Mao, M. ; Schneider, T. ; Hegde, H. ; Sin, K. ; Funada, S. ; Shi, S.
Author_Institution :
Fremont Application Lab., Veeco Instrum., Inc., Fremont, CA, USA
Abstract :
Summary form only given. The self-limiting growth nature of atomic layer chemical vapor deposition (ALCVD) allows depositions of very thin dielectric layers with excellent conformality, uniformity and atomic level thickness control. The challenge to implement the technology to thin oxide gap and tunnel barrier applications in recording heads and magnetic random access memory is the control in surface chemistry and process conditions, which are not necessarily compatible to the processing of magnetic materials and may therefore cause significant degradation in magnetic properties and device performance. In this paper, we evaluate the feasibility of ultrathin ALCVD AlO/sub x/ layers for tunnel barrier applications.
Keywords :
MIM structures; aluminium compounds; chemical vapour deposition; dielectric thin films; exchange interactions (electron); magnetic multilayers; magnetic tunnelling; magnetisation; ALCVD process sequence; AlO/sub x/; CoFe-AlO/sub x/-CoFe-IrMn; CoFe/AlO/sub x//CoFe/IrMn; atomic layer chemical vapor deposition; breakdown strength; exchange biased magnetization loops; film thickness; magnetic films; self-limiting growth; ultrathin dielectric barrier layers; Atomic layer deposition; Chemical technology; Chemical vapor deposition; Chemistry; Dielectrics; Magnetic devices; Magnetic heads; Magnetic recording; Random access memory; Thickness control;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001182
