Title :
Low resistance pinhole-free spin dependent tunneling materials
Author :
Ki-Seok Moon ; Yingjian Chen ; Changhe Shang ; Yiming Huai
Abstract :
Summary form only given. The authors have reported spin-dependent tunneling (SDT) materials with a bottom-pinned structure, in which the alumina barrier was prepared by a "two-step oxidation" method, resulting in a pinhole-free barrier of 7 /spl Aring/ thickness and a significantly improved tunneling magnetoresistive (TMR) effect. They studied the pinhole-free mechanism as a result of the two step oxidation process, and used this method as the basis for obtaining SDT films with low resistance-area (RA) value and high TMR.
Keywords :
MIM structures; alumina; cobalt alloys; ferromagnetic materials; iron alloys; magnetic multilayers; oxidation; tunnelling magnetoresistance; 7 A; Al; CoFe-Al/sub 2/O/sub 3/-CoFe; alumina barrier; bottom-pinned structure; films; pinhole-free barrier; resistance-area value; spin-dependent tunneling; tunneling magnetoresistive effect; two step oxidation process; Artificial intelligence; Magnetic domain walls; Magnetic field measurement; Moon; Optical films; Optical microscopy; Oxidation; Temperature; Tunneling magnetoresistance; X-ray scattering;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001186
