Title :
Modeling and characterization of the nMOS transistor stressed by hot-carrier injection
Author :
Bouchakour, R. ; Hardy, L. ; Limbourg, I. ; Jourdain, M.
Author_Institution :
CNRS, Ecole Nat. Superieure des Telecommun., Paris, France
Abstract :
This paper presents the modeling and characterization of degradation effects by hot-carrier injection on the electrical behavior of the nMOS transistor. The one-dimensional analytical model developed is based on the sharing of the channel into cells in which the principle of charge neutrality is applied. This model is able to rake into account a lateral distribution of defects at the interface and the charge trapping in the oxide layer
Keywords :
MOSFET; hot carriers; interface states; semiconductor device models; surface recombination; charge neutrality principle; charge sheet approach; charge trapping; degradation effects; electrical behavior; hot-carrier injection stress; interface defects; lateral defect distribution; modeling; nMOS transistor; one-dimensional analytical model; oxide layer; short channel MOSFET; surface recombination velocity; Analytical models; Circuit simulation; Degradation; Electron traps; Equations; Hot carrier injection; MOSFET circuits; Predictive models; Secondary generated hot electron injection; Very large scale integration;
Conference_Titel :
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3073-0
DOI :
10.1109/ISCAS.1996.541996
