Title :
6.6+ GHz Low Vmin, read and half select disturb-free 1.2 Mb SRAM
Author :
Joshi, R. ; Houle, R. ; Batson, K. ; Rodko, D. ; Patel, P. ; Huott, W. ; Franch, R. ; Chan, Y. ; Plass, D. ; Wilson, S. ; Wang, P.
Author_Institution :
IBM, New York
Abstract :
A fully functional read and half select disturb-free 1.2 Mb SRAM is demonstrated. Measured results show an operating range of 0.4 V to 1.5 V and -25degC to 100degC, speed of 6.6+ GHz at IV, 25degC and yield of 90-100%.
Keywords :
SRAM chips; disturb-free 1.2 Mb SRAM; static random-access memory; storage capacity 1.2 Mbit; temperature -25 degC to 100 degC; voltage 0.4 V; voltage 1.5 V; Circuit testing; Clocks; Counting circuits; Frequency; Logic testing; Programmable logic arrays; Pulse measurements; Random access memory; Space vector pulse width modulation; Voltage;
Conference_Titel :
VLSI Circuits, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-05-5
Electronic_ISBN :
978-4-900784-05-5
DOI :
10.1109/VLSIC.2007.4342738
