• DocumentCode
    1570973
  • Title

    6.6+ GHz Low Vmin, read and half select disturb-free 1.2 Mb SRAM

  • Author

    Joshi, R. ; Houle, R. ; Batson, K. ; Rodko, D. ; Patel, P. ; Huott, W. ; Franch, R. ; Chan, Y. ; Plass, D. ; Wilson, S. ; Wang, P.

  • Author_Institution
    IBM, New York
  • fYear
    2007
  • Firstpage
    250
  • Lastpage
    251
  • Abstract
    A fully functional read and half select disturb-free 1.2 Mb SRAM is demonstrated. Measured results show an operating range of 0.4 V to 1.5 V and -25degC to 100degC, speed of 6.6+ GHz at IV, 25degC and yield of 90-100%.
  • Keywords
    SRAM chips; disturb-free 1.2 Mb SRAM; static random-access memory; storage capacity 1.2 Mbit; temperature -25 degC to 100 degC; voltage 0.4 V; voltage 1.5 V; Circuit testing; Clocks; Counting circuits; Frequency; Logic testing; Programmable logic arrays; Pulse measurements; Random access memory; Space vector pulse width modulation; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2007 IEEE Symposium on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-900784-05-5
  • Electronic_ISBN
    978-4-900784-05-5
  • Type

    conf

  • DOI
    10.1109/VLSIC.2007.4342738
  • Filename
    4342738
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1570973