Title :
A low-voltage class-AB linear transconductance based on floating-gate MOS technology
Author :
Farshidi, Ebrahim
Author_Institution :
Dept. of Electr. Eng., Shahid Chamran Univ. of Ahvaz, Ahvaz, Iran
Abstract :
In this paper a new low-voltage class-AB operational transconductance amplifier is presented. The circuit employs floating gate MOS (FG-MOS) transistors operating in saturated strong inversion. The converter features low circuit complexity, adjustably, low supply voltage (0.7 V), low power (<10 uW), two quadrant input current, wide dynamic range and immunity from body effect. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed technique and demonstrate the functionality of the circuit.
Keywords :
CMOS analogue integrated circuits; SPICE; low-power electronics; operational amplifiers; CMOS process; FG-MOS transistor; HSPICE simulation; floating-gate MOS technology; low-voltage class-AB linear transconductance amplifier; operational transconductance amplifiers; voltage 0.7 V; Batteries; Circuits; Complexity theory; Low voltage; MOSFETs; Operational amplifiers; Silicon; Tail; Transconductance; Transconductors;
Conference_Titel :
Circuit Theory and Design, 2009. ECCTD 2009. European Conference on
Conference_Location :
Antalya
Print_ISBN :
978-1-4244-3896-9
Electronic_ISBN :
978-1-4244-3896-9
DOI :
10.1109/ECCTD.2009.5275011
