A low-voltage class-AB linear transconductance based on floating-gate MOS technology

In this paper a new low-voltage class-AB operational transconductance amplifier is presented. The circuit employs floating gate MOS (FG-MOS) transistors operating in saturated strong inversion. The converter features low circuit complexity, adjustably, low supply voltage (0.7 V), low power (<10 uW), two quadrant input current, wide dynamic range and immunity from body effect. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed technique and demonstrate the functionality of the circuit.