Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

Summary form only given. Recently, much attention has been focused on exchange coupling between a ferromagnetic layer and an antiferromagnetic layer, because of its elusive mechanism and its applications in spin-valve devices. For FeMn(22 nm)/NiFe(20 nm) bilayers, using electron beam lithography and ion beam etching, a wire-like array has been patterned in the FeMn layer by partially etching the FeMn layer. The authors present a scanning electron microscope image and study the magnetic properties of a wire-like array patterned sample.