DocumentCode
1571250
Title
MOCVD Grown III–V Nanowires: In-Plane, self-aligned and transfer-printable
Author
Fortuna, Seth A. ; Wen, Jianguo ; Li, Xiuling
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL
fYear
2008
Firstpage
429
Lastpage
430
Abstract
We report here the controlled growth and characterization of self-aligned and in-plane GaAs nanowires grown on GaAs (100) substrates with metalorganic chemical vapor deposition (MOCVD) and Au metal catalysts.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; gold; nanowires; semiconductor growth; Au; GaAs; III-V nanowires; MOCVD grown; controlled growth; in plane; self aligned; transfer printable; Atomic force microscopy; Gallium arsenide; Gold; III-V semiconductor materials; MOCVD; Nanoscale devices; Nanowires; Substrates; Surface morphology; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688674
Filename
4688674
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