Title :
Photoluminescence study of InGaN site-controlled nanostructures formed by selective area epitaxy
Author :
Lee, L.K. ; Jung, T. ; Ku, P.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
Abstract :
We studied photoluminescence of InGaN site-controlled nanostructures formed by selective area epitaxy. We developed a theoretical model for the nanoscale growth evolution and used this model for the optimization of optical qualities of InGaN nanostructures.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; nanostructured materials; optical materials; photoluminescence; semiconductor growth; wide band gap semiconductors; InGaN; InGaN site-controlled nanostructures; photoluminescence; selective area epitaxy; Computational modeling; Epitaxial growth; Gallium nitride; MOCVD; Nanostructures; Optical control; Optical films; Photoluminescence; Plasma temperature; Semiconductor process modeling;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688676
