Influence of ion dosage on exchange field and GMR of irradiated PtMn-based spin valves

Author

Chih-Huang Lai ; Yang, C.H.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Taiwan

fYear

2002

Abstract

Summary form only given. Ion irradiation has been used to manipulate the exchange field in the FeMn/NiFe system. Depending on the dosage and energy, the exchange field can be either enhanced due to defects acting as pinning sites or be suppressed to zero due to atomic intermixing. We recently reported that irradiated C ions in as-deposited NiMn films may result in modification of the phase transformation during the post-annealing process. In this article, the effects of the C ion dosage are investigated on phase transformation of PtMn and on GMR of PtMn-based spin valves.

Keywords

antiferromagnetic materials; crystal defects; exchange interactions (electron); giant magnetoresistance; interface magnetism; ion beam effects; ion beam mixing; manganese alloys; platinum alloys; solid-state phase transformations; spin valves; C; GMR; PtMn; atomic intermixing; exchange field; ion dosage; ion irradiation; irradiated C ions; irradiated PtMn-based spin valves; phase transformation; pinning sites; post-annealing; Acceleration; Annealing; Antiferromagnetic materials; Corrosion; Magnetic materials; Materials science and technology; Power engineering and energy; Rapid thermal processing; Spin valves; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1001237

Filename

1001237