Title :
A Compact eFUSE Programmable Array Memory for SOI CMOS
Author :
Safran, John ; Leslie, Alan ; Fredeman, Gregory ; Kothandaraman, Chandrasekharan ; Cestero, Alberto ; Chen, Xiang ; Rajeevakumar, Raj ; Kim, Deok-kee ; Li, Yan Zun ; Moy, Dan ; Robson, Norman ; Kirihata, Toshiaki ; Iyer, Subramanian
Author_Institution :
IBM, Hopewell
Abstract :
Demonstrating a >10X density increase over traditional VLSI fuse circuits, a compact eFUSE programmable array memory configured as a 4 Kb one-time programmable ROM (OTPROM) is presented using a 6.2 mum2 NiSix silicide electromigration ITIR cell in 65 nm SOI CMOS. A 20 mus programming time at 1.5 V is achieved by asymmetrical scaling of the fuse and a shared differential sensing scheme. Having zero process cost adder, eFUSE is fully compatible with standard VLSI manufacturing.
Keywords :
CMOS digital integrated circuits; PROM; VLSI; electric fuses; electromigration; nickel compounds; programmable logic arrays; semiconductor storage; silicon-on-insulator; NiSi; OTPROM; SOI CMOS; asymmetrical scaling; compact eFUSE programmable array memory; one-time programmable ROM; shared differential sensing scheme; silicide electromigration ITIR cell; size 65 nm; standard VLSI manufacturing; time 20 mus; voltage 1.5 V; zero process cost adder; CMOS memory circuits; Decoding; Electromigration; Fuses; Geometry; MOSFETs; Microelectronics; Silicides; Very large scale integration; Voltage; CMOS; OTPROM; electrical fuse;
Conference_Titel :
VLSI Circuits, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-05-5
Electronic_ISBN :
978-4-900784-05-5
DOI :
10.1109/VLSIC.2007.4342770
