Analysis of angular dependent resistance measurements on IrMn-based spin valves using a finite pinning model

Summary form only given. In this work, we present magnetoresistive measurements of IrMn based spin valves as a function of temperature and applied field angle. We extend the analysis method of Miller et al. (1993) to include a finite pinning field, such that rotation of this layer in response to the varying field direction is captured. Both the pinned and free ferromagnetic layers are assumed to be single domain, with the GMR arising from interfaces and the AMR effect arising from the volume of the layers. A summary of the parameters extracted from this analysis is shown. Equations show how the measured resistance is assumed to depend on these variables. The extracted parameters were each confirmed with a separate measurement. We believe the primary utility of this method is in locating the direction of the pinned free layer when no field is applied (i.e. the bias point) even in cases when pinning becomes weak.