Title :
A 512Ã\x978 electrical fuse memory with 15μm2 cells using 8-sq asymmetric fuse and core devices in 90nm CMOS
Author :
Chung, Shine ; Huang, Jiann-Tseng ; Chen, Paul ; Hsueh, Fu-Lung
Author_Institution :
Taiwan Semicond. Manuf. Corp., Hsinchu
Abstract :
A 15 μm2 cell 4 Kb electrical fuse memory is designed in 90 nm CMOS using core devices only. The N+ 8-sq asymmetric fuses are used to enhance fuse uniformity, reliability, and aggregate electro-migration. High-gain cascade amplifiers sense small resistance differences to achieve a 2.25 V program voltage in 1 mus. A sufficient design window is derived and verified by using on-chip resistance monitor without area overheads.
Keywords :
CMOS memory circuits; electric fuses; electromigration; integrated circuit design; integrated circuit reliability; CMOS; asymmetric fuse; core devices; electrical fuse memory; electromigration; fuse reliability; fuse uniformity; high-gain cascade amplifiers; on-chip resistance monitor; size 90 nm; time 1 mus; voltage 2.25 V; Aggregates; Circuits; Electric resistance; Fuses; Inverters; MOS devices; Monitoring; Resistors; Switches; Voltage;
Conference_Titel :
VLSI Circuits, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-04-8
Electronic_ISBN :
978-4-900784-05-5
DOI :
10.1109/VLSIC.2007.4342771
