Title :
Effect of Power Supply Noise on SRAM Dynamic Stability
Author :
Khellah, Muhammad ; Khalil, DiaaEldin ; Somasekhar, Dinesh ; Ismail, Yehea ; Karnik, Tanay ; De, Vivek
Author_Institution :
Intel, Hillsboro
Abstract :
We present both simulation results and test-chip measurements on the effect of power supply noise on SRAM dynamic cell stability. Results indicate that to accurately capture the effect of supply droop on bit failure rate, not only the DC amplitude of the noise needs to be considered as commonly practiced, but also its phase and frequency.
Keywords :
SRAM chips; circuit noise; integrated circuit testing; power supply circuits; SRAM dynamic cell stability; bit failure rate; power supply noise effect; static random access memory; test-chip measurement; Circuit noise; Circuit simulation; Circuit stability; Circuit testing; Frequency; Noise level; Noise measurement; Phase noise; Power supplies; Random access memory;
Conference_Titel :
VLSI Circuits, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-05-5
Electronic_ISBN :
978-4-900784-05-5
DOI :
10.1109/VLSIC.2007.4342772
