Magnetic/semiconductor heterostructures for spintronic devices

Author

De Boeck, J. ; Van Roy, W. ; Motsnyi, V.F. ; Liu, Z. ; Van Dorpe, P. ; Nijboer, M. ; Das, J. ; Goovaerts, E. ; Safarov, V.I. ; Borghs, G.

Author_Institution

UIA, Univ. of Antwerp, Antwerpen, Belgium

fYear

2002

Abstract

Summary form only given. We discuss materials options to build spintronic devices illustrated by our recent experimental findings in fabricating NiMnSb epitaxial magnetic contacts, ferromagnetic/insulator/semiconductor (FM/I/S) spin-LED´s and (Al,Ga)MnAs-based heterostructures. We use all the bandgap engineering tricks of advanced semiconductor devices to exploit and enhance spin-dependent effects.

Keywords

III-V semiconductors; aluminium compounds; antimony alloys; gallium arsenide; interface magnetism; magnetic semiconductors; magnetoelectronics; manganese alloys; manganese compounds; nickel alloys; AlGaMnAs-based heterostructures; bandgap engineering; epitaxial magnetic contacts; ferromagnetic/insulator/semiconductor spin-LED; magnetic/semiconductor heterostructures; spintronic devices; Iron; Magnetic devices; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetic separation; Magnetoelectronics; Optical polarization; Semiconductor devices; Spin polarized transport;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1001246

Filename

1001246