Title :
Spin-valve transistor formed on GaAs[001] substrate
Author :
Mizushima, Kazuyo ; Sato, Ryota
Author_Institution :
Corp. Res. Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
Summary form only given. The spin-valve transistor shows very large magnetocurrent ratio exceeding 200%, but the transfer ratio of the transistor, that is, the ratio of the collector to the emitter current, which is important for application, has been only of the order of 10/sup -5/. To enhance the transfer ratio by reducing the diffuse scattering in the base, we prepared the transistor using for the base an Fe/Au/Fe [001] epitaxial film that was grown on an n-GaAs [001] substrate.
Keywords :
III-V semiconductors; ferromagnetic materials; gallium arsenide; gold; iron; magnetic multilayers; semiconductor-metal boundaries; spin polarised transport; spin valves; tunnelling magnetoresistance; Fe-Au-Fe; Fe/Au/Fe [001] epitaxial film; GaAs; GaAs[001] substrate; diffuse scattering; spin-valve transistor; transfer ratio; very large magnetocurrent ratio; Conductivity; Gallium arsenide; Gold; Iron; Photonic band gap; Physics; Scattering; Semiconductor materials; Substrates; Voltage;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001251
