Title :
Highly efficient light emission based on plasmonics
Author :
Okamoto, Koichi ; Kawakami, Yoichi
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto
Abstract :
Surface plasmon coupling was used to enhance light-emission from InGaN/GaN quantum wells. Huge enhancements which depend on emission wavelength were observed and the possible enhancement mechanism was represented by using the 3D-FDTD simulations.
Keywords :
III-V semiconductors; finite difference time-domain analysis; gallium compounds; indium compounds; optical materials; photoluminescence; semiconductor quantum wells; surface plasmons; wide band gap semiconductors; 3D-FDTD simulations; InGaN-GaN; emission wavelength; light emission enhancement; photoluminescence; quantum wells; surface plasmon coupling; Fluorescence; Gallium nitride; Light sources; Nanostructures; Optical coupling; Optical surface waves; Plasmons; Radiative recombination; Silver; Spontaneous emission;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688704
