Title :
An object-oriented material-property database architecture for microelectromechanical CAD
Author :
Shulman, M.A. ; Ramaswamy, M. ; Heytens, M.L. ; Senturia, S.D.
Author_Institution :
Dept. of Electr. Eng. & Comput Sci., MIT, Cambridge, MA, USA
Abstract :
The authors report on the implementation of an object-oriented database for capturing the process dependence of material properties of microelectronic materials. The database is a component of the MIT MEMCAD system, but will also be useful as a stand-alone module. It can accept data in several different forms: individual numbers; tables; and an algebraic function expressing the dependence of the material property on process conditions. The architecture and operation of the database are illustrated with the example of the temperature and gas-flow dependence of the residual stress in LPCVD (low-pressure chemical vapor deposited) silicon nitride.<>
Keywords :
CAD; chemical vapour deposition; electric sensing devices; electrical engineering computing; micromechanical devices; object-oriented databases; silicon compounds; LPCVD; MIT MEMCAD system; Si/sub x/N/sub y/; gas-flow dependence; material-property database architecture; microelectromechanical CAD; microelectronic materials; object-oriented database; residual stress; stand-alone module; temperature dependence; Design automation; Material properties; Materials science and technology; Microelectronics; Micromechanical devices; Object oriented databases; Object oriented modeling; Silicon; Solid modeling; Spatial databases;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148918
