Title :
Realization of extended ultrabroadband quantum-dash laser emission using postgrowth intermixing
Author :
Tan, C.L. ; Djie, H.S. ; Dimas, C.E. ; Hongpinyo, V. ; Ding, Y.H. ; Ooi, B.S.
Author_Institution :
Center for Opt. Technol. & Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
We demonstrate a widened ultrabroad-stimulated emission in InAs/InAlGaAs quantum-dash laser using the postgrowth lattice-intermixing technique. The 100 nm wavelength blue-shifted device exhibits larger lasing bandwidth (~41 nm) than as-grown laser (~25 nm) with a spectral ripple of <1 dB.
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; indium compounds; quantum dot lasers; stimulated emission; InAs-InAlGaAs; extended ultrabroadband quantum-dash laser emission; postgrowth lattice-intermixing technique; widened ultrabroad-stimulated emission; Biomedical optical imaging; Chemical lasers; Laser tuning; Optical pumping; Optical sensors; Photonic band gap; Quantum dot lasers; Quantum well lasers; Spectroscopy; Stimulated emission;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688725
