DocumentCode :
1572316
Title :
Self-organized quantum dot lasers monolithically grown on silicon
Author :
Bhattacharya, Pallab ; Yang, Jun ; Mi, Zetian
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
fYear :
2008
Firstpage :
531
Lastpage :
532
Abstract :
Monolithic optoelectronic integrated circuits on CMOS chips are envisioned for realizing future high speed systems. Some of the key technologies that are required include electrically injected, low threshold and highly reliable lasers and the monolithic integration of lasers, waveguides and modulators on Si with Si-based electronic devices in a CMOS-compatible process.
Keywords :
CMOS integrated circuits; III-V semiconductors; indium compounds; integrated optoelectronics; optical modulation; optical waveguides; quantum dot lasers; silicon; CMOS chips; InGaAs; Si; monolithic optoelectronic integrated circuits; monolithically grown quantum dot laser; optical modulators; optical waveguide; self-organized quantum dot lasers; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Monolithic integrated circuits; Power lasers; Quantum dot lasers; Silicon; Temperature; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
Type :
conf
DOI :
10.1109/LEOS.2008.4688726
Filename :
4688726
Link To Document :
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