Antiferromagnetic coupled high-frequency carrier-type magnetic field sensor using NiFe/FeMn multilayer

Author

Takezawa, Masaaki ; Yamasaki, Jiro

Author_Institution

Kyushu Inst. of Technol., Kitakyushu, Japan

fYear

2002

Abstract

Summary form only given. We discuss a new method of obtaining asymmetrical characteristics of high-frequency carrier-type magnetic sensors (or so-called MI sensor) by using antiferromagnetic coupling. Generally, high sensitivity of the sensor is realized by applying a dc bias field because the sensor is insensitive around a zero applied field due to the symmetrical characteristics. Our main idea is lamination of ferromagnetic films with antiferromagnetic films, which can obtain asymmetrical characteristics without dc bias field owing to unidirectional anisotropy.

Keywords

antiferromagnetic materials; exchange interactions (electron); ferromagnetic materials; iron alloys; laminations; magnetic anisotropy; magnetic multilayers; magnetic sensors; magnetisation; manganese alloys; nickel alloys; sputtered coatings; MI sensor; Ni/sub 80/Fe/sub 20/-Fe/sub 50/Mn/sub 50/; NiFe/FeMn multilayer; antiferromagnetic coupling; antiferromagnetic films; asymmetrical characteristics; ferromagnetic films; high-frequency carrier-type magnetic sensors; lamination; magnetization; unidirectional anisotropy; Antiferromagnetic materials; Couplings; Magnetic anisotropy; Magnetic films; Magnetic heads; Magnetic multilayers; Magnetic sensors; Magnetization; Permeability; Sensor phenomena and characterization;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1001281

Filename

1001281