A 3–20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications

Author

Howard, Duane C. ; Poh, John ; Mukerjee, Tonmoy S. ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2010

Firstpage

445

Lastpage

448

Abstract

We present an ultra-wideband, Low Noise Amplifier (LNA) implemented in Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe LNA is broadband, covering the frequency range of 3-20 GHz, and achieves a peak gain of 21.3 dB. The SiGe LNA exhibits a Noise Figure (NF) of 4.2-5.2 dB across an 8-18 GHz band and consumes 35.2 mA from a 3.3 V supply.

Keywords

heterojunction bipolar transistors; low noise amplifiers; radiocommunication; silicon compounds; SiGe; SiGe HBT ultra-wideband LNA; Silicon-Germanium heterojunction bipolar transistor; current 35.2 mA; frequency 3 GHz to 20 GHz; multiband wireless application; noise figure; return loss control; ultra-wideband low noise amplifier; voltage 3.3 V; Broadband amplifiers; Frequency; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium; Ultra wideband technology; BiCMOS; LNA; SiGe; UWB; ideband; noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on

Conference_Location

Seattle, WA

ISSN

1548-3746

Print_ISBN

978-1-4244-7771-5

Type

conf

DOI

10.1109/MWSCAS.2010.5548729

Filename

5548729