Title :
The effect of nonequilibrium carrier distribution on supercontinuum broadband quantum-dash laser emission
Author :
Tan, C.L. ; Djie, H.S. ; Dimas, C.E. ; Hongpinyo, V. ; Ding, Y.H. ; Ooi, B.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
We demonstrate the effect of nonequilibrium carrier distribution in a highly inhomogeneous quantum-dash-in-well laser. The electroluminescence spectra show the presence of localized photon reabsorption and lasing action from different quantum-dash ensembles at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; excited states; gallium arsenide; gallium compounds; indium compounds; localised states; quantum dash lasers; quantum well lasers; supercontinuum generation; In0.64Ga0.16Al0.2As; electroluminescence spectra; excited states; inhomogeneous quantum-dash-in-well laser; lasing action; localized photon reabsorption; nonequilibrium carrier distribution; supercontinuum broadband quantum-dash laser emission; Biomedical optical imaging; Chemical lasers; Laser modes; Nonlinear optics; Optical pumping; Optical sensors; Plasma temperature; Quantum well lasers; Semiconductor lasers; Stimulated emission;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688739
