The effect of nonequilibrium carrier distribution on supercontinuum broadband quantum-dash laser emission

Author

Tan, C.L. ; Djie, H.S. ; Dimas, C.E. ; Hongpinyo, V. ; Ding, Y.H. ; Ooi, B.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

2008

Firstpage

557

Lastpage

558

Abstract

We demonstrate the effect of nonequilibrium carrier distribution in a highly inhomogeneous quantum-dash-in-well laser. The electroluminescence spectra show the presence of localized photon reabsorption and lasing action from different quantum-dash ensembles at room temperature.

Keywords

III-V semiconductors; aluminium compounds; electroluminescence; excited states; gallium arsenide; gallium compounds; indium compounds; localised states; quantum dash lasers; quantum well lasers; supercontinuum generation; In_0.64Ga_0.16Al_0.2As; electroluminescence spectra; excited states; inhomogeneous quantum-dash-in-well laser; lasing action; localized photon reabsorption; nonequilibrium carrier distribution; supercontinuum broadband quantum-dash laser emission; Biomedical optical imaging; Chemical lasers; Laser modes; Nonlinear optics; Optical pumping; Optical sensors; Plasma temperature; Quantum well lasers; Semiconductor lasers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the

Conference_Location

Acapulco

Print_ISBN

978-1-4244-1931-9

Electronic_ISBN

978-1-4244-1932-6

Type

conf

DOI

10.1109/LEOS.2008.4688739

Filename

4688739